|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
1. product profile 1.1 general description 180 w ldmos packaged asymmetrical doherty power transistor for base station applications at frequencies from 2496 mhz to 2690 mhz. [1] test signal: 3gpp test model 1; 1 to 64 dp ch; par = 7.2 db at 0.01 % probability on ccdf. 1.2 features and benefits ? high efficiency ? excellent ruggedness ? designed for broadband operation ? low thermal resistance providing excellent thermal stability ? integrated esd protection ? designed for low memory effects prov iding excellent pre-distortability ? lower output capacitance for improved performance in doherty applications ? asymmetrical design to achieve opt imal efficiency across the band ? decoupling leads to enable improved video bandwidth ? internally matched for ease of use (input and output) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifier for w-cdma base statio ns and multi carrier applications in the 2496 mhz to 2690 mhz frequency range blc8g27ls-180av power ldmos transistor rev. 2 ? 9 february 2015 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a doherty production test circuit. test signal f v ds p l(av) g p ? d acpr (mhz) (v) (w) (db) (%) (dbc) 1-carrier w-cdma 2496 to 2690 28 28 14 43.5 ? 30 [1]
blc8g27ls-180av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 2 ? 9 february 2015 2 of 14 nxp semiconductors blc8g27ls-180av power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1 drain1 (main) 2 drain2 (peak) 3 gate1 (main) 4 gate2 (peak) 5 video decoupling (main) 6 video decoupling (peak) 7source [1] d d d table 3. ordering information type number package name description version blc8g27ls-180av - air cavity plastic earless flanged package; 6 leads sot1275-3 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 ?c; v ds =28v; i dq = 200 ma ; v gs(amp)peak = 0.6 v; f = 2600 mhz; p l =28w 0.38 k/w blc8g27ls-180av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 2 ? 9 february 2015 3 of 14 nxp semiconductors blc8g27ls-180av power ldmos transistor 6. characteristics table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit main device v (br)dss drain-source breakdown voltage v gs =0v; i d =0.7ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d =72ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds =28 v; i d = 300 ma 1.6 2.0 2.4 v i dss drain leakage current v gs =0v; v ds =28v - - 1.2 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v - 13.3 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 120 na g fs forward transconductance v ds =10v; i d = 72 ma - 0.63 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =2.52a - 198 318 m ? peak device v (br)dss drain-source breakdown voltage v gs =0v; i d =1.3ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 130 ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds =28 v; i d = 600 ma 1.6 2.0 2.4 v i dss drain leakage current v gs =0v; v ds =28v - - 1.2 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -23-a i gss gate leakage current v gs =11v; v ds = 0 v - - 120 na g fs forward transconductance v ds =10v; i d = 130 ma - 1.13 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =4.55a - 109 155 m ? table 7. rf characteristics test signal: 1-carrier w-cdma; par = 7.2 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1 to 64 dpch; f 1 = 2496 mhz; f 2 = 2690 mhz; rf performance at v ds =28v; i dq = 200 ma (main); v gs(amp)peak = 0.6 v; t case =25 ? c; unless otherwise specified; in an asymmetrical doherty production test circuit at 2496 mhz to 2690 mhz. symbol parameter conditions min typ max unit g p power gain p l(av) =28w 13 14 - db rl in input return loss p l(av) =28w - ? 10 ? 7db ? d drain efficiency p l(av) = 28 w 39.5 43.5 - % acpr adjacent channel power ratio p l(av) =28w - ? 30 ? 26 dbc table 8. rf characteristics test signal: pulsed cw; t p = 100 ? s; ? = 10 %; f = 2690 mhz; rf performance at v ds = 28 v; i dq = 200 ma (main); v gs(amp)peak = 0.6 v; t case = 25 ? c; unless otherwise specified; in an asymmetrical doherty production test circuit at 2496 mhz to 2690 mhz. symbol parameter conditions min typ max unit p l(3db) output power at 3 db gain compression 153 173 193 w blc8g27ls-180av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 2 ? 9 february 2015 4 of 14 nxp semiconductors blc8g27ls-180av power ldmos transistor 7. test information 7.1 ruggedness in doherty operation the blc8g27ls-180av is capable of withstanding a load mismatch corresponding to a vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 200 ma (main); v gs(amp)peak =0.6v; p l = 140 w; f = 2496 mhz. 7.2 impedance information [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. table 9. typical impedance of main device measured load-pull data of main device; i dq = 420 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) maximum power load 2496 3.1 ? j7.4 2.7 ? j7.7 49.4 56.4 14.7 2600 4.0 ? j7.7 2.7 ? j8.3 49.3 54.8 15.3 2690 4.6 ? j7.2 2.7 ? j8.3 49.4 56 16.1 maximum drain efficiency load 2496 3.1 ? j7.4 5.7 ? j6.1 47.7 63.3 17 2600 4.0 ? j7.7 4.2 ? j6.1 48.1 62.6 17.5 2690 4.6 ? j7.2 3.7 ? j6.4 48.2 63 18.2 table 10. typical impedance of peak device measured load-pull data of peak device; i dq = 780 ma (peak); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) maximum power load 2496 3.9 ? j8.9 3.9 ? j10.8 51.7 55 14.2 2600 5.3 ? j9.3 4.7 ? j12.0 51.6 52.4 14.6 2690 6.3 ? j7.6 6.0 ? j12.4 51.3 54 15.6 maximum drain efficiency load 2496 3.9 ? j8.9 3.9 ? j7.6 50.2 62.5 16.3 2600 5.3 ? j9.3 3.3 ? j8.3 49.9 61.6 17 2690 6.3 ? j7.6 4.1 ? j9.1 49.8 60.5 17.6 blc8g27ls-180av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 2 ? 9 february 2015 5 of 14 nxp semiconductors blc8g27ls-180av power ldmos transistor 7.3 recommended impedances for doherty design [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [3] at p l(av) = 44.5 dbm. [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [3] at p l(av) = 44.5 dbm. 7.4 vbw in doherty operation the blc8g27ls-180av shows 125 mhz (typ ical) video bandwidth in doherty development board in 2600 mhz at v ds =28v; i dq = 200 ma and v gs(amp)peak =0.6v. fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h table 11. typical impedance of main device at 1 : 1 load measured load-pull data of main device; i dq = 420 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [3] g p [3] (mhz) (? ) (? ) (dbm) (%) (db) 2496 3.9 ? j8.9 4.0 ? j7.6 49.0 42 18.8 2600 5.3 ? j9.3 3.9 ? j7.5 48.9 41 19.0 2690 6.3 ? j7.6 3.3 ? j7.6 49.1 40 20.0 table 12. typical impedance of main device at 1 : 2 load measured load-pull data of main device; i dq = 420 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [3] g p [3] (mhz) (? ) (? ) (dbm) (%) (db) 2496 3.9 ? j8.9 7.7 ? j5.8 46.7 53.0 20.5 2600 5.3 ? j9.3 7.0 ? j5.1 46.5 52.0 21.0 2690 6.3 ? j7.6 5.4 ? j5.5 47.0 51.0 22.0 blc8g27ls-180av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 2 ? 9 february 2015 6 of 14 nxp semiconductors blc8g27ls-180av power ldmos transistor 7.5 test circuit printed-circuit board (pcb): rogers ro4350b; ? r = 3.5; thickness = 0.508 mm; thickness copper plating = 35 ? m. see table 13 for a list of components. fig 2. component layout for test circuit table 13. list of components see figure 2 for component layout. component description value remarks c1, c4, c13, c15, c17, c18 multilayer ceramic chip capacitor 10 ? f, 50 v murata: smd 1206 c2, c5, c14, c16 multilayer ceramic chip capacitor 1 ? f, 50 v murata: smd 1206 c3, c6, c7, c8, c9, c10, c12 multilayer ceramic chip capa citor 11 pf atc 600f series c11 multilayer ceramic chip ca pacitor 3 pf atc 600f series c19, c20 electrolytic capacitor 2200 ? f, 63 v vishay bccomponents r1 smd resistor 50 ? r2, r3 smd resistor 5.1 ? smd 0805 d d d p p p p p p & |